Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces

摘要

The spatial distribution and site distribution of metal-induced gap states (MIGS) are studied by thickness-dependent near-edge x-ray absorption fine structure (NEXAFS) and by comparing the cation and anion-edge NEXAFS. The thickness-dependent NEXAFS shows that the decay length of MIGS depends on an alkali-halide rather than a metal, and it is larger for alkali-halides with smaller band gap energies. By comparing the Cl-edge and K-edge NEXAFS for KCl/Cu(001), MIGS are found to be states localizing at anion sites.